• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for manufacturing a donor substrate (40) for transferring a piezoelectric layer (3) to a support substrate (6), said method being characterized in that it comprises the following steps: providing a piezoelectric substrate (3), - providing a handling substrate (2), - depositing a photo-polymerizable adhesive layer (1) on a main surface of the handling substrate (2) or of the piezoelectric substrate (3), - bonding of the piezoelectric substrate (3) to the handling substrate (2) via the adhesive layer (1), to form a heterostructure (4) - irradiation of said heterostructure (4) by a luminous flux (5) for polymerizing the adhesive layer, so as to form said donor substrate (40).
    公开号:FR3079346A1
    申请号:FR1852573
    申请日:2018-03-26
    公开日:2019-09-27
    发明作者:Djamel Belhachemi；Thierry Barge
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER
    FIELD OF THE INVENTION
    The present invention relates to a method of manufacturing a donor substrate for the transfer of a piezoelectric layer, as well as to a method of transfer of such a piezoelectric layer. The invention finds particular application in the manufacture of radiofrequency devices, such as resonators or filters.
    BACKGROUND OF THE INVENTION
    It is known to manufacture a radiofrequency (RF) device, such as a resonator or filter, on a substrate comprising successively, from its base towards its surface, a support substrate, generally made of a semiconductor material such as silicon, a electrically insulating layer and a piezoelectric layer.
    Volume acoustic wave devices (BAW, acronym for the Anglo-Saxon term "Bulk Acoustic Wave") typically comprise a thin piezoelectric layer (that is to say of thickness generally substantially less than 1 μm) and two electrodes arranged on each main face of said thin layer. An electrical signal, typically a change in electrical voltage, applied to an electrode is converted into an elastic wave which propagates through the piezoelectric layer. The propagation of this elastic wave is favored if the frequency of the wave corresponds to the frequency band of the filter. This wave is again converted into an electrical signal by reaching the electrode located on the opposite side.
    The piezoelectric layer is typically obtained by transferring a thick substrate from a piezoelectric material (for example obtained by cutting an ingot) onto a support substrate. The support substrate is for example a silicon substrate.
    The transfer of the piezoelectric layer involves bonding of the thick piezoelectric substrate on the support substrate, followed by a thinning of the thick piezoelectric substrate, so as to leave on the support substrate only a thin piezoelectric layer, of the desired thickness for the manufacture of the RF device.
    For good adhesion of the piezoelectric substrate to the support substrate, an oxide layer (for example a silicon oxide SiO 2 ) is generally deposited on each of the two substrates, and said substrates are bonded via said oxide layers.
    To reinforce such an oxide-oxide bonding, it is known to carry out, before bonding, a plasma activation of the surfaces to be bonded, and, after bonding, a consolidation annealing.
    Said consolidation annealing is typically carried out at a temperature between 100 ° C and 300 ° C.
    However, the piezoelectric material and the material of the support substrate having very different thermal expansion coefficients, the implementation of such an annealing generates a significant deformation of the assembly.
    To overcome this type of problem, it is known to use a donor pseudo-substrate, that is to say a heterostructure in which the thick piezoelectric substrate is bonded to a handling substrate ("handle substrate" in English). Thus, after bonding of said donor pseudo-substrate and of the support substrate, the thick piezoelectric substrate is maintained between the handling substrate and the support substrate. The choice of materials and thicknesses of the handling substrate and the support substrate makes it possible to ensure a certain symmetry of the coefficients of thermal expansion, and thus to minimize the deformation of the assembly during the application of heat treatments.
    The donor pseudo-substrate could thus be produced by assembling the thick piezoelectric substrate and a silicon substrate, each covered with an oxide layer.
    However, such a heterostructure has several drawbacks.
    On the one hand, the deposition of an oxide layer on the thick piezoelectric substrate causes a significant curvature (“bow” according to the English-English terminology) of said piezoelectric substrate, not very compatible with the subsequent stages of the process, which are suitable for flat substrates.
    Furthermore, the formation of the oxide layers necessary for bonding is long and costly.
    Finally, as mentioned above, the heterostructure cannot be subjected to consolidation annealing due to the differences in coefficients of thermal expansion between the thick piezoelectric substrate and the handling substrate. However, in the absence of consolidation annealing, the bonding energy of the oxide layers of the two substrates remains very low, so that the mechanical strength of the donor pseudo-substrate is insufficient. Consequently, a break at the bonding interface can occur during the thinning step of the thick piezoelectric substrate.
    BRIEF DESCRIPTION OF THE INVENTION
    An object of the invention is to remedy the aforementioned drawbacks and in particular to design a donor substrate for the transfer of a thin piezoelectric layer from a thick substrate onto a support substrate, which is less expensive to produce, which has better resistance mechanical and / or which has a lower curvature than existing substrates.
    To this end, the invention provides a method of manufacturing a donor substrate for the transfer of a piezoelectric layer onto a support substrate, said method being mainly characterized in that it comprises the following steps:
    providing a piezoelectric substrate, providing a handling substrate, depositing a photo-polymerizable adhesive layer on a main face of the handling substrate or piezoelectric substrate, bonding the piezoelectric substrate to the handling substrate via the adhesive layer, to form a heterostructure irradiating said heterostructure with a light flux to polymerize the adhesive layer, so as to form said donor substrate.
    The use of a photopolymerizable adhesive layer to assemble the heterostructure constituting the donor substrate makes it possible to give said substrate good mechanical strength while dispensing with the process steps implemented at high temperature likely to generate a significant curvature of the substrate. Furthermore, the formation of such an adhesive layer is very simple to implement and is inexpensive.
    According to other aspects, the proposed manufacturing process has the following different characteristics taken alone or according to their technically possible combinations:
    the thickness of the photopolymerizable adhesive layer is between 2 μm and 8 μm;
    the deposition of the photo-polymerizable adhesive layer is carried out by centrifugal coating;
    the bonding step is carried out at a temperature between 20 ° C and 50 ° C, preferably between 20 ° C and 30 ° C;
    the light flux is applied through the piezoelectric substrate; irradiation is carried out on an impulse basis;
    the luminous flux has a wavelength between 320 nm and 365 nm;
    the handling substrate and the support substrate are made of materials such that the difference in coefficient of thermal expansion between the material of the handling substrate and the material of the support substrate is less than or equal to 5%, and preferably approximately equal to 0 %;
    the handling substrate is silicon, sapphire, polycrystalline aluminum nitride (AIN), or gallium arsenide (GaAs).
    Another object of the invention relates to a process for transferring a piezoelectric layer onto a support substrate, comprising:
    the supply of a donor substrate obtained by the implementation of the manufacturing process described above, the formation of a weakening zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred, the supply of the support substrate, the formation of a dielectric layer on a main face of the support substrate and / or of the piezoelectric substrate, the bonding of the donor substrate to the support substrate, said dielectric layer being at the bonding interface, the fracture and the separation of the donor substrate along the embrittlement zone, at a temperature less than or equal to 300 ° C.
    According to other aspects, the proposed transfer process has the following different characteristics taken alone or according to their technically possible combinations:
    the dielectric layer is a layer of glass deposited by centrifugation on the piezoelectric substrate;
    the method comprises, before bonding, the formation of an oxide layer, or a nitride layer, or a layer comprising a combination of nitride and oxide, or a superposition of at least one oxide layer and a layer of nitride on the support substrate;
    the embrittlement zone is formed by implantation of atomic species in the piezoelectric substrate.
    Another object of the invention relates to a method of manufacturing a volume acoustic wave device, comprising depositing electrodes on two opposite faces of a piezoelectric layer. This process is mainly characterized in that it comprises the manufacture of said piezoelectric layer by a transfer process described above.
    The invention also relates to a donor substrate for the transfer of a piezoelectric layer, consisting of a heterostructure comprising a piezoelectric substrate bonded to a handling substrate. The substrate is mainly characterized in that it comprises, at the interface between the piezoelectric substrate and the handling substrate, a polymerized adhesive layer.
    According to other aspects, the proposed transfer process has the following different characteristics taken alone or according to their technically possible combinations:
    the handling substrate is a substrate of silicon, sapphire, polycrystalline aluminum nitride (AIN), or gallium arsenide (GaAs);
    the thickness of the polymerized adhesive layer is between 2 μm and 8 μm.
    BRIEF DESCRIPTION OF THE DRAWINGS
    Other characteristics and advantages of the invention will emerge from the detailed description which follows, with reference to the attached drawings in which:
    Figure 1 schematically illustrates the step of depositing the photopolymerizable adhesive layer on the handling substrate;
    FIG. 2 schematically illustrates the step of supplying the thick piezoelectric substrate;
    FIG. 3 schematically illustrates a heterostructure obtained by bonding the piezoelectric substrate to the handling substrate by means of the adhesive layer;
    FIG. 4 schematically illustrates the step of polymerization of the adhesive layer in the heterostructure so as to form the pseudo-donor substrate, called simply the donor substrate, according to the invention;
    FIG. 5 schematically illustrates the step of implanting atomic species in the donor substrate of FIG. 4 so as to form therein a zone of embrittlement;
    FIG. 6 schematically illustrates a support substrate on which a dielectric layer has been deposited;
    FIG. 7 schematically illustrates the step of bonding the weakened donor substrate to the support substrate;
    FIG. 8 illustrates the substrate obtained after fracture and separation of the donor substrate along the embrittlement zone;
    FIG. 9 is a schematic illustration of a volume acoustic wave filter according to an embodiment of the invention.
    For reasons of readability of the figures, the elements illustrated are not necessarily shown to scale. Furthermore, the elements designated by the same reference signs in different figures are identical or fulfill the same function.
    DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
    A first object of the invention relates to a method of manufacturing a donor substrate for the transfer of a piezoelectric layer onto a support substrate.
    The donor substrate is fabricated by bonding a piezoelectric substrate to a handling substrate.
    The handling substrate is made of a material whose coefficient of thermal expansion is close to that of the material of the support substrate on which the piezoelectric layer is intended to be transferred. By “close” is meant a difference in coefficient of thermal expansion between the material of the handling substrate and the material of the support substrate less than or equal to 5%, and preferably equal to or close to 0%. Suitable materials are, for example, silicon, sapphire, polycrystalline aluminum nitride (AIN), or even gallium arsenide (GaAs). In the present invention, we are interested in the coefficient of thermal expansion in a plane parallel to the main surface of the substrates.
    According to a first step shown in FIG. 1, a photopolymerizable adhesive layer 1 is deposited on an exposed face of the handling substrate 2 or of the piezoelectric substrate 3. In FIG. 1, the deposition is carried out on the handling substrate 2.
    The deposition of the photo-polymerizable adhesive layer 1 is advantageously carried out by centrifugal coating, or "spin coating" in English terminology. This technique consists in rotating the substrate on which the deposition of the photo-polymerizable layer is provided on itself at a substantially constant and relatively high speed, in order to spread said photo-polymerizable layer uniformly over the whole of the surface of the substrate by centrifugal force. To this end, the substrate is typically placed and maintained by drawing a vacuum on a turntable.
    A person skilled in the art is able to determine the operating conditions, such as the volume of adhesive deposited on the surface of the substrate, the speed of rotation of the substrate, and the minimum duration of the deposit as a function of the thickness desired for the adhesive layer.
    The thickness of the photopolymerizable adhesive layer is typically between 2 and 8 μm.
    According to a nonlimiting example, the photopolymerizable adhesive layer sold under the reference "NOA 61" by the company NORLAND PRODUCTS can be used in the present invention.
    The piezoelectric substrate, as shown in Figure 2, is then bonded to the handling substrate through the adhesive layer 1, to form a heterostructure 4, an embodiment of which is shown in Figure 3.
    The heterostructure 4 is thus formed by the superposition of the handling substrate 2, the adhesive layer 1, and the piezoelectric substrate 3, the adhesive layer being at the interface between the handling substrate and the piezoelectric substrate.
    The bonding is preferably carried out at room temperature, that is to say approximately 20 ° C. It is however possible to carry out hot bonding at a temperature between 20 ° C and 50 ° C, and more preferably between 20 ° C and 30 ° C.
    In addition, the bonding step is advantageously carried out under vacuum, which makes it possible to desorb the water from the surfaces forming the bonding interface, that is to say the surface of the adhesive layer and the surface of the substrate. manipulation or piezoelectric substrate.
    The heterostructure 4 is then subjected to irradiation with a light flux 5, in order to polymerize the adhesive layer 1. The irradiation of the heterostructure and represented in FIG. 4.
    The light source is preferably a laser.
    The light radiation, or light flux, is preferably ultra-violet (UV) radiation. Depending on the composition of the adhesive layer, preferably UV radiation having a wavelength between 320 nm (nanometers) and 365 nm will be chosen.
    The irradiation is carried out by exposing the free face 30 of the piezoelectric substrate 3 to the incident light radiation. Thus, the light radiation 5 penetrates into the heterostructure 4 from the free face 30 of the piezoelectric substrate, passes through the piezoelectric substrate 3, until it reaches the adhesive layer 1, thus causing the polymerization of said adhesive layer.
    The polymerization of the adhesive layer 1 makes it possible to form a polymer layer 10 which ensures the mechanical cohesion of the heterostructure, while keeping together the handling substrate 2 and the piezoelectric substrate 3 which form the donor substrate.
    The irradiation of the heterostructure gives rise to a thermal process according to which the piezoelectric layer, traversed by the radiation, can partially absorb the energy of the radiation and heat up. Too much heating would destabilize the structure of the piezoelectric layer, which could lead to a degradation of the physical and chemical properties of the piezoelectric layer. In addition, too much heating would cause a deformation of the piezoelectric layer and of the handling substrate due to their difference in coefficient of thermal expansion, leading to an overall deformation, known as “bow” in English terminology, of the heterostructure. and therefore of the resulting donor substrate.
    In order to avoid excessive heating of the piezoelectric layer, the irradiation is advantageously carried out in an impulse manner, that is to say by exposing the heterostructure to a plurality of pulses of light rays. Each pulse is produced during a determined irradiation time, which can be equal to or different from one pulse to another. The pulses are spaced in time by a determined rest time during which the heterostructure is not exposed to light rays.
    Those skilled in the art are able to determine the irradiation time of each pulse, the rest time between each pulse, as well as the number of pulses to be made to completely polymerize the adhesive layer.
    Thus, for example, we can implement a dozen pulses for 10 seconds each, separated by rest times also for 10 seconds each.
    After irradiation, a donor substrate 40 consisting of heterostructure 4 is obtained with a polymerized adhesive layer 10.
    The polymerized adhesive layer makes it possible to bond the piezoelectric substrate and the handling substrate without exposing them to a thermal budget which would be liable to deform them, which makes it possible to give the donor substrate 40 sufficient mechanical strength for the subsequent transfer of a layer. piezoelectric.
    The thickness of the polymerized adhesive layer 10 is preferably between 2 μm (micrometers) and 8 μm. This thickness depends in particular on the material constituting the photopolymerizable adhesive layer deposited before bonding, on the thickness of said photopolymerizable adhesive layer, and on the experimental irradiation conditions.
    Optionally, the donor substrate 40 is subjected to a surface treatment intended to make the exposed surface of the piezoelectric layer planar and to reduce its roughness.
    A second object of the invention relates to a method for transferring a piezoelectric layer on a support substrate.
    A donor substrate is initially provided comprising the piezoelectric layer to be transferred. The donor substrate is preferably obtained by the manufacturing process described above according to the first subject of the invention.
    A support substrate 6 is also provided, capable of receiving the piezoelectric layer to be transferred. The support substrate is preferably made of silicon.
    According to a first step shown in FIG. 5, a weakening zone 7 is formed in the piezoelectric substrate 3, so as to delimit the piezoelectric layer to be transferred 31. The depth of the weakening zone 7 relative to the exposed surface of the substrate piezoelectric determines the thickness of the piezoelectric layer to be transferred.
    According to a preferred embodiment, the embrittlement zone is formed by implantation of atomic species in the piezoelectric substrate, the implantation being represented in FIG. 5 by the arrows 9. The atomic species are implanted at a determined depth of the piezoelectric substrate which determines the thickness of the piezoelectric layer to be transferred.
    When the embrittlement zone is formed by implantation of atomic species, the implanted atomic species are preferably hydrogen ions and / or helium ions.
    A dielectric layer 8 is then formed on a main face of the support substrate 6 and / or of the piezoelectric substrate. FIG. 6 represents the support substrate 6 on which a dielectric layer 8 has been deposited.
    Preferably, the dielectric layer is a layer of glass deposited by centrifugation on the piezoelectric substrate, called "spin-on glass" (SOG) according to English terminology. This technique is advantageous in that the deposition of the layer is carried out at ambient temperature, and followed by a densification annealing at a temperature of approximately 250 ° C., and therefore does not cause deformation of the substrate on which the layer dielectric is formed.
    Optionally, the surface 30 or 60 to be bonded on which the dielectric layer has not been deposited, of the donor substrate 40 or of the support substrate 6, undergoes a treatment suitable for subsequently allowing hydrophilic molecular bonding of this surface with the other respective surface. Preferably, such a treatment consists in forming on the support substrate an oxide layer, or a nitride layer, or a layer comprising a combination of nitride and oxide, or a superposition of an oxide layer and d 'a layer of nitride. For example, in the case of a silicon support substrate, it is possible to form a layer of oxide SiO 2 , or a layer of nitride Si 3 N 4 , a layer comprising a combination of nitride and oxide SiOxNy, or a superposition of a layer of SiO 2 oxide and a layer of nitride Si 3 N 4 .
    Preferably, a layer of silicon oxide will be formed when the support substrate is made of silicon.
    Thereafter, the donor substrate 40 is bonded to the support substrate 6, as illustrated in FIG. 7.
    The bonding is carried out so that the dielectric layer 8 is at the bonding interface. The multilayer structure 20 formed then successively comprises the support substrate 6, the dielectric layer 8, the piezoelectric layer to be transferred 31 from the piezoelectric substrate 3, the polymer layer 10, and the handling substrate 2.
    After bonding, the multilayer structure 20 is subjected to thermal annealing and the donor substrate 40 is detached from the support substrate 6 along the embrittlement zone 7, thus allowing the transfer of the piezoelectric layer 31 onto the support substrate 6.
    FIG. 8 illustrates the final structure obtained after fracture and separation of the donor pseudosubstrate along the embrittlement zone, comprising the transferred piezoelectric layer 31 arranged on the support substrate 6, with the dielectric layer 8 located at the interface of the piezoelectric layer transferred 31 and from the support substrate 6.
    The stage of fracture and separation of the donor substrate is carried out at a temperature such that the polymerized adhesive layer is not degraded. A temperature less than or equal to 300 ° C. makes it possible to avoid such degradation of the polymerized adhesive layer. A temperature of the order of 160 ° C is sufficient to fracture the piezoelectric substrate along the embrittlement zone.
    The piezoelectric substrate being maintained between two substrates (namely, the handling substrate and the support substrate) whose coefficients of thermal expansion are close, it is not subjected to differential deformation during the implementation of annealing.
    A third object of the invention relates to a non-limiting application of the transfer method according to the second object of the invention. A method of manufacturing a volume acoustic wave device is proposed, comprising depositing electrodes on two opposite faces of a piezoelectric layer produced according to the transfer method according to the second object of the invention.
    Figure 9 is a principle view of a volume acoustic wave resonator.
    The resonator 70 comprises a thin piezoelectric layer 31 (that is to say a thickness generally less than 1 μm, preferably less than 0.2 μm) and two electrodes 71, 72 arranged on either side of said resonator piezoelectric layer 31. The piezoelectric layer 31 rests on a support substrate 6. To isolate the resonator from the substrate and thus avoid the propagation of waves in the substrate, a Bragg mirror 73 is interposed between the electrode 71 and the substrate 6. De alternatively (not shown), this insulation could be achieved by providing a cavity between the substrate and the piezoelectric layer. These various arrangements are known to those skilled in the art and will therefore not be described in detail in the present text.
    In some cases, the support substrate may not be optimal for the final application. It may then be advantageous to transfer the layer 31 onto a final substrate (not shown), the properties of which are chosen according to the intended application, by bonding it to said final substrate and removing the support substrate by any suitable technique.
    To manufacture a volume acoustic wave device, according to one embodiment, an adaptation of the method described above must be carried out. On the one hand, before the bonding step illustrated in FIG. 7, a first electrode is deposited on the free surface of the layer 31 to be transferred from the donor substrate, this first electrode (referenced 71 in FIG. 9) being buried in the final stack. After the transfer step illustrated in FIG. 8, a second electrode (referenced 72 in FIG. 9) is deposited on the free surface of the layer 31, opposite the first electrode. Another option is to transfer the layer 31 onto a final substrate as mentioned above and to form the electrodes before and after said transfer. On the other hand, to avoid the propagation of acoustic waves in the support substrate 6, it is possible to integrate therein an isolation means which can be, for example, a Bragg mirror 5 (as illustrated in FIG. 9) or a cavity previously etched in the support substrate or in the final substrate if necessary.
    Finally, it goes without saying that the application which has just been given is only a particular illustration in no way limiting as regards the fields of application of the invention.
    权利要求:
    Claims (17)
    [1" id="c-fr-0001]
    1. Method for manufacturing a donor substrate (40) for the transfer of a piezoelectric layer (3) onto a support substrate (6), said method being characterized in that it comprises the following steps:
    providing a piezoelectric substrate (3), providing a handling substrate (2), depositing a photopolymerizable adhesive layer (1) on a main face of the handling substrate (2) or the substrate piezoelectric (3), bonding the piezoelectric substrate (3) to the handling substrate (2) via the adhesive layer (1), to form a heterostructure (4) irradiating said heterostructure (4) by a light flux (5) for polymerizing the adhesive layer, so as to form said donor substrate (40).
    [2" id="c-fr-0002]
    2. Method according to claim 1, wherein the thickness of the photopolymerizable adhesive layer (1) is between 2 pm and 8 pm.
    [3" id="c-fr-0003]
    3. Method according to one of claims 1 or 2, wherein the deposition of the photopolymerizable adhesive layer (1) is carried out by centrifugal coating.
    [4" id="c-fr-0004]
    4. Method according to one of the preceding claims, wherein the bonding step is carried out at a temperature between 20 ° C and 50 ° C, preferably between 20 ° C and 30 ° C.
    [5" id="c-fr-0005]
    5. Method according to any one of the preceding claims, in which the light flux (5) is applied through the piezoelectric substrate (3).
    [6" id="c-fr-0006]
    6. Method according to any one of the preceding claims, in which the irradiation is carried out in an impulse manner.
    [7" id="c-fr-0007]
    7. Method according to any one of the preceding claims, in which the light flux (5) has a wavelength between 320 nm and 365 nm.
    [8" id="c-fr-0008]
    8. Method according to any one of the preceding claims, in which the handling substrate (2) and the support substrate (6) are made of materials such as the difference in coefficient of thermal expansion between the material of the handling substrate and the material of the support substrate is less than or equal to 5%, and preferably approximately equal to 0%.
    [9" id="c-fr-0009]
    9. Method according to any one of the preceding claims, in which the handling substrate (2) is made of silicon, sapphire, polycrystalline aluminum nitride (AIN), or gallium arsenide (GaAs).
    [10" id="c-fr-0010]
    10. Method for transferring a piezoelectric layer (3) onto a support substrate (6), comprising:
    supplying a donor substrate (40) obtained by implementing the manufacturing method according to any one of the preceding claims, forming a weakening zone (7) in the piezoelectric substrate (3), so delimiting the piezoelectric layer to be transferred (31), the supply of the support substrate (6), the formation of a dielectric layer (8) on a main face of the support substrate (6) and / or of the piezoelectric substrate (3), bonding of the donor substrate (40) to the support substrate (6), said dielectric layer (8) being at the bonding interface, the fracture and separation of the donor substrate (40) along the embrittlement zone (7 ), at a temperature less than or equal to 300 ° C.
    [11" id="c-fr-0011]
    11. The method of claim 10, wherein the dielectric layer (8) is a layer of glass deposited by centrifugation on the piezoelectric substrate.
    [12" id="c-fr-0012]
    12. Method according to one of claims 10 or 11, comprising, before bonding, the formation of an oxide layer, or a nitride layer, or a layer comprising a combination of nitride and oxide, or a superposition of at least one oxide layer and a nitride layer on the support substrate (6).
    [13" id="c-fr-0013]
    13. Method according to any one of claims 10 to 12, wherein the formation of the embrittlement zone (7) is carried out by implantation of atomic species (9) in the piezoelectric substrate.
    [14" id="c-fr-0014]
    14. A method of manufacturing a volume acoustic wave device (70), comprising depositing electrodes (71, 72) on two opposite faces of a piezoelectric layer (31), characterized in that it comprises the manufacturing said piezoelectric layer (31) by a method according to one of claims 10 to 13.
    [15" id="c-fr-0015]
    15. Donor substrate for the transfer of a piezoelectric layer, consisting of a heterostructure (4) comprising a piezoelectric substrate (3) bonded to a handling substrate (2), said substrate being characterized in that it comprises, the interface
    5 between the piezoelectric substrate (3) and the handling substrate (2), a polymerized adhesive layer (10).
    [16" id="c-fr-0016]
    16. The substrate according to claim 15, in which the handling substrate (2) is a substrate made of silicon, sapphire, polycrystalline aluminum nitride (AIN), or
    10 gallium arsenide (GaAs).
    [17" id="c-fr-0017]
    17. Substrate according to one of claims 15 or 16, in which the thickness of the polymerized adhesive layer (10) is between 2 pm and 8 pm.
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    同族专利:
    公开号 | 公开日
    CN111919290A|2020-11-10|
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    US20210020826A1|2021-01-21|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP0924769A1|1997-07-03|1999-06-23|Seiko Epson Corporation|Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus|
    US20030082889A1|2001-10-30|2003-05-01|Junya Maruyama|Semiconductor device and method of manufacturing the same|
    WO2017052646A1|2015-09-25|2017-03-30|Intel Corporation|Island transfer for optical, piezo and rf applications|
    FR3108788A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    FR3108789A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    法律状态:
    2019-02-19| PLFP| Fee payment|Year of fee payment: 2 |
    2019-09-27| PLSC| Publication of the preliminary search report|Effective date: 20190927 |
    2020-02-20| PLFP| Fee payment|Year of fee payment: 3 |
    2021-02-25| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-21| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1852573A|FR3079346B1|2018-03-26|2018-03-26|METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER|
    FR1852573|2018-03-26|FR1852573A| FR3079346B1|2018-03-26|2018-03-26|METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER|
    CN201980021982.3A| CN111919290A|2018-03-26|2019-03-21|Process for transferring a piezoelectric layer onto a carrier substrate|
    KR1020207029598A| KR20200135411A|2018-03-26|2019-03-21|Method for transferring a piezoelectric layer on a supporting substrate|
    US17/041,355| US20210020826A1|2018-03-26|2019-03-21|Method for transferring a piezoelectric layer onto a support substrate|
    SG11202009335RA| SG11202009335RA|2018-03-26|2019-03-21|Method for transferring a piezoelectric layer onto a support substrate|
    JP2020551934A| JP2021519536A|2018-03-26|2019-03-21|Method of transferring the piezoelectric layer onto the support substrate|
    PCT/FR2019/050645| WO2019186032A1|2018-03-26|2019-03-21|Method for transferring a piezoelectric layer onto a support substrate|
    EP19718438.5A| EP3776641A1|2018-03-26|2019-03-21|Method for transferring a piezoelectric layer onto a support substrate|
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